RFMD® UNVEILS 2ND GENERATION ULTRA-HIGH EFFICIENCY PAs
Family Of 4G LTE And WCDMA Power Amplifiers Delivers Industry-Best Peak
Efficiency Across All Modes And Bands
Barcelona, Spain, February, 27, 2012 – RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced the expansion of its ultra-high efficiency power amplifier (PA) product portfolio to include six 4G LTE PAs. The new PAs deliver superior peak efficiency and current consumption in LTE mode and complement RFMD’s first-generation family of ultra-high efficiency PAs for WCDMA applications.
With the addition of the six new LTE PAs, RFMD’s ultra-high efficiency product family now covers WCDMA bands 1, 2, 3, 4, 5, and 8, and LTE bands 4, 7, 11, 13, 17, 18, 20, and 21 – helping to accelerate the global reach of LTE in mobile devices and significantly enhancing the mobile broadband consumer experience related to data throughput, battery life, and thermal performance.
RFMD’s ultra-high efficiency PAs reset the bar for performance in smartphones and other high-performance data-centric connected devices. The PAs deliver ultra-high peak efficiency of 42%-44% in LTE mode, significantly above competitive product portfolios. RFMD’s LTE PAs also offer unprecedented linearity at the highest power conditions, enabling bandwidths up to 20MHz and resulting in higher data transfers.
In both 3G and 4G LTE, RFMD’s ultra-high efficiency PAs leverage the Company’s leadership in RF systems expertise and RF power management to deliver best-in-class current consumption across all power levels and in all modes and bands. RFMD’s leadership in power management is expected to be increasingly critical in calendar 2012, as leading cellular solutions begin to adopt advanced power management schemes, such as average power tracking (APT) and envelope tracking (ET).
Eric Creviston, president of RFMD’s Cellular Products Group (CPG), said, “As RFMD’s customers continue to push the limits on band count and form factor, this is creating an unprecedented opportunity for RFMD to solve the increasingly complex RF challenges related to battery life and thermal performance. We expect strong growth and market share gains in 3G and 4G LTE as our ultra-high efficiency product portfolio continues to expand.”
RF Micro Devices, Inc. (Nasdaq GS: RFMD) is a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies. RFMD’s products enable worldwide mobility, provide enhanced connectivity and support advanced functionality in the cellular handset, wireless infrastructure, wireless local area network (WLAN), CATV/broadband and aerospace and defense markets. RFMD is recognized for its diverse portfolio of semiconductor technologies and RF systems expertise and is a preferred supplier to the world’s leading mobile device, customer premises and communications equipment providers.
Headquartered in Greensboro, N.C., RFMD is an ISO 9001- and ISO 14001-certified manufacturer with worldwide engineering, design, sales and service facilities. RFMD is traded on the NASDAQ Global Select Market under the symbol RFMD. For more information, please visit RFMD’s web site at www.rfmd.com.